Paper Type |
Contributed Paper |
Title |
Tensile Strained, Type II, GaP/GaAs Nanostructures |
Author |
P. Prongjit, N. Pankaow, P. Boonpeng, S. Thainoi, S. Panyakeow and S. Ratanathammaphan* |
Email |
rsomchai@chula.ac.th |
Abstract: We demonstrate the fabrication of self-assembled GaP nanostructures on GaAs (100) substrates by droplet epitaxy using molecular beam epitaxy. The dependency of GaP nanostructural properties on substrate temperature (250-350oC) as droplets are deposited is investigated. The dimension, density, and shape of GaP nanostructures strongly depend on the substrate temperature. It is found that nano-dots are formed when Ga droplets are deposited at 250oC, while ring-shape nanostructures are formed when Ga droplets are deposited at 300oC or higher. Photoluminescence results confirm the high quality of the GaP nanocrystals. |
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Start & End Page |
957 - 962 |
Received Date |
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Revised Date |
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Accepted Date |
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Full Text |
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Keyword |
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Volume |
Vol.40 No.6 SPECIAL ISSUE 2 |
DOI |
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Citation |
Prongjit P., Pankaow N., Boonpeng P., Thainoi S., Panyakeow S. and Ratanathammaphan S., Tensile Strained, Type II, GaP/GaAs Nanostructures , Chiang Mai J. Sci., 2013; 40(6): 957-962. |
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