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Influence of Vacuum Annealing Temperature on Structural, Optical and Electrical of Nanocolumnar AZO Films for TCO Application


Paper Type 
Contributed Paper
Title 
Influence of Vacuum Annealing Temperature on Structural, Optical and Electrical of Nanocolumnar AZO Films for TCO Application
Author 
Kittikhun Seawsakul, Mati Horprathum*, Pitak Eiamchai , Viyapol Pattantsetakul, Saksorn Limwichean, Chanunthorn Chananonnawathorn, Pennapa Muthitamongkol, Chanchana Thanachayanont, Annop Klamchuen, Tuksadon Wutikhun, Hideki Nakajima, Miskawan Sripakdee and Prayoon Songsiriritthigul*
Email 
mati.horprathum@nectec.or.th
Abstract:
In this work, the nanocolumnar AZO thin film was deposited on glass slide and silicon wafer
(100) substrate by dc pulsed magnetron sputtering with glancing angle deposition (GLAD) technique
on the silicon (100) wafer and glass slide substrate. The influences of annealing treatment on the
nanocolumnar AZO thin films prepared in different temperature at 200 – 400 °C for 3 hours in vacuum
were investigated. The physical morphologies, optical and electrical properties of the vertically aligned
nanocolumnar AZO thin films were investigated using grazing incident X-ray diffraction (GIXRD),
field-emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM),
UV-Vis-NIR spectrophotometer with angle-dependent technique and Hall-effect measurement.
The crystal structure analysis from GIXRD indicated that as-deposited and annealed nanocolumnar
AZO films were crystalline with wurtzite structure. In addition, the results show that the optimum
annealed temperature of 400 °C was the most valuable to improve the optical transmission in visible
region (86.6%) with omnidirectional anti-reflection property and low resistivity (1.70×10-3 Ω·cm) of
nanocolumnar AZO films.
Start & End Page 
815 - 822
Received Date 
2019-07-24
Revised Date 
Accepted Date 
2020-01-15
Full Text 
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Keyword 
AZO, pulsed dc magnetron sputtering, GLAD, vacuum annealing
Volume 
Vol.47 No.4 (Special Issue II : July 2020)
DOI 
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