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Composition Investigations of Nearly Lattice-Matched InGaPN Films on GaAs (001) Substrates Grown by MOVPE
Paper Type  |
Contributed Paper |
Title |
Composition Investigations of Nearly Lattice-Matched InGaPN Films on GaAs (001) Substrates Grown by MOVPE |
Author |
Phongbandhu Sritonwong, Sakuntam Sanorpim, Kentaro Onabe |
Email |
Sakuntam.s@chula.ac.th |
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Abstract: We have reported on an alternative way, which is a combination of micro-Raman spectroscopy and high resolution X-ray diffraction (HRXRD) measurements, to evaluate the In and N contents and a corresponding misfit strain in the InGaPN films grown on GaAs (001) substrates by metal organic vapor phase epitaxy (MOVPE). Firstly, the In content was evaluated by means of micro-Raman scattering to be 56.4±0.8 at%, 55.8±0.8 at%, 55.9±0.9 at% and 55.7±1.1 at%, which were confirmed by HRXRD, for the DMHy flow rates of 0, 300, 700 and 1,100 µmol/min, respectively. Based on HRXRD results, next, the N content was estimated to be 0.9±0.4 at%, 1.4±0.4 at% and 2.1±0.5 at% for the DMHy flow rates of 300, 700 and 1,100 µmol/min, respectively. With increasing N content, misfit strain is also reduced from 0.65% to 0.12%. This suggests that a nearly lattice-matched film, which has the highest N content of 2.1±0.5 at%, exhibits the lowest misfit strain of 0.12%. Our results showed an achievement in a use of micro-Raman spectroscopy as a tool to evaluate the In content, which is a primary parameter using to calculate the N content in the InGaPN film. |
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Start & End Page |
288 - 295 |
Received Date |
2015-09-15 |
Revised Date |
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Accepted Date |
2015-11-06 |
Full Text |
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Keyword |
MOVPE, HRXRD, Raman scattering, InGaPN, III-V Nitrides, misfit strain, lattice mismatch |
Volume |
Vol.43 No.2 (SPECIAL ISSUE 1) |
DOI |
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Citation |
Sritonwong P., Sanorpim S. and Onabe K., Composition Investigations of Nearly Lattice-Matched InGaPN Films on GaAs (001) Substrates Grown by MOVPE, Chiang Mai Journal of Science, 2016; 43(2): 288-295. |
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