Thermoelectric P Proper roper roperties ties of Antimony T Telluride elluride Thin Films ilms Deposited using R R..F F. . Magnetron Sputtering

Kandasamy andasamy andasamy, , S S*., ., P Pachoud, achoud, D., Holland, A., K Kalantar alantar alan
* Author for corresponding; e-mail address: sasikaran@ieee.org
Volume: Vol.32 No.3 (SEPTEMBER 2005)
Research Article
DOI:
Received: -, Revised: -, Accepted: -, Published: -

Citation: Andasamy K.A., S. S., . , Pachoud P., Achoud , D. , et al., Thermoelectric P Proper roper roperties ties of Antimony T Telluride elluride Thin Films ilms Deposited using R R..F F. . Magnetron Sputtering, Chiang Mai Journal of Science, 2005; 32(3): 459-464.

Abstract

In this paper, we report the fabrication parameters for thin films (0.5-2 µm) of antimony telluride (p- type semiconductor) deposited using R. F. magnetron sputtering. Optimal deposition conditions were found to be at a sputtering power of 60 W, 5 cm distance between the sample and target, a substrate temperature of 50 °C and sputtering duration of 300 seconds. The Seebeck coefficient and electrical resistivity of these films were measured at room temperature (295 K). The Seebeck coefficient and the electrical resistivity of the antimony telluride was found to be approximately 213 µV/K and 585 µΩm, respectively. The microstructural characteristics of the thin films were investigated using Scanning Electron Microscopy and X-Ray Diffraction. The XRD analysis indicated the presence of monoclinic (SbTe), hexagonal (Sb₂Te₂) and rhombohedral (Sb₂Te₃) crystal structures.

Keywords: antimony telluride, magnetron sputtering, Sb2Te3, Seebeck coefficient, thin film

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Chiang Mai Journal of Science

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