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Thermoelectric P Proper roper roperties ties of Antimony T Telluride elluride Thin Films ilms Deposited using R R..F F. . Magnetron Sputtering
Paper Type  |
Contributed Paper |
Title |
Thermoelectric P Proper roper roperties ties of Antimony T Telluride elluride Thin Films ilms Deposited using R R..F F. . Magnetron Sputtering |
Author |
Kandasamy andasamy andasamy, , S S*., ., P Pachoud, achoud, D., Holland, A., K Kalantar alantar alan |
Email |
sasikaran@ieee.org |
|
Abstract: In this paper, we report the fabrication parameters for thin films (0.5-2 µm) of antimony telluride (p- type semiconductor) deposited using R. F. magnetron sputtering. Optimal deposition conditions were found to be at a sputtering power of 60 W, 5 cm distance between the sample and target, a substrate temperature of 50 °C and sputtering duration of 300 seconds. The Seebeck coefficient and electrical resistivity of these films were measured at room temperature (295 K). The Seebeck coefficient and the electrical resistivity of the antimony telluride was found to be approximately 213 µV/K and 585 µΩm, respectively. The microstructural characteristics of the thin films were investigated using Scanning Electron Microscopy and X-Ray Diffraction. The XRD analysis indicated the presence of monoclinic (SbTe), hexagonal (Sb2Te2) and rhombohedral (Sb2Te3) crystal structures.
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Start & End Page |
459 - 464 |
Received Date |
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Revised Date |
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Accepted Date |
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Full Text |
Download |
Keyword |
antimony telluride, magnetron sputtering, Sb2Te3, Seebeck coefficient, thin film |
Volume |
Vol.32 No.3 (SEPTEMBER 2005) |
DOI |
|
Citation |
Andasamy K.A., S. S., . , Pachoud P., Achoud , D. , et al., Thermoelectric P Proper roper roperties ties of Antimony T Telluride elluride Thin Films ilms Deposited using R R..F F. . Magnetron Sputtering, Chiang Mai J. Sci., 2005; 32(3): 459-464. |
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