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Urbach Energy of Hexagonal ZnO and Mg 0.05 Zn 0.95 O Thin Film Grown by RF Sputtering
Paper Type  |
Contributed Paper |
Title |
Urbach Energy of Hexagonal ZnO and Mg 0.05 Zn 0.95 O Thin Film Grown by RF Sputtering |
Author |
Sornchai T anunchai, Sripen T owta, Nik orn Mangk orntong, P ongsri Mangk orntong and Supab |
Email |
supab@science.cmu.ac.th |
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Abstract: The Urbach energy which is associated with Urbachs tail can be deduced from the absorption coefficient and depends on structural defects. Thus, the Urbach energy is used as a parameter to determine the optimum growth conditions of ZnO and Mg0.05Zn0.95O thin film grown by rf sputtering. The thin films were deposited from single target of ZnO and Mg0.05Zn0.95O onto glass substrates with no intentional heating under argon atmosphere of 30 militorr. The sputtering power was varied between 100-300 watts. It was found that at sputtering power of 150 watt the deduced Urbach energy has the lowest value indicating the optimum sputtering power.
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Start & End Page |
453 - 458 |
Received Date |
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Revised Date |
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Accepted Date |
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Full Text |
Download |
Keyword |
MgZnO, rf sputtering, thin film, Urbach energy, Urbachs tail, wide band gap semiconductor, ZnO |
Volume |
Vol.32 No.3 (SEPTEMBER 2005) |
DOI |
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Citation |
Anunchai S..T., Owta S..T., Orntong N.O..M. and Supab P.O..M.O., Urbach Energy of Hexagonal ZnO and Mg 0.05 Zn 0.95 O Thin Film Grown by RF Sputtering, Chiang Mai Journal of Science, 2005; 32(3): 453-458. |
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