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Dynamic Pyroelectric Properties of La-Doped PbTiO 3 Thin F ilms with V arious L a Concentrations


Paper Type 
Contributed Paper
Title 
Dynamic Pyroelectric Properties of La-Doped PbTiO 3 Thin F ilms with V arious L a Concentrations
Author 
Yung Sup Y oon
Email 
ysyoon@inha.ac.kr
Abstract:
In this study, dynamic pyroelectric properties of  La-doped PbTiO3 (PLT) thin films with dopant  amounts  of  5,  10,  and  15mol%  have  been  investigated.  The  voltage  responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional  to  the  frequency  at high modulation  frequency  for the PLT thin films of  three compositions. The noise voltages for the three compositions decrease with the square root of the modulation frequency due to the predominance of dielectric loss component in Johnson noise. Among the films investigated, the PLT thin film with 10mol% of  La (PLT(10) thin film) shows the best pyroelectric characteristics. The pyroelectric coefficient of  PLT(10) thin film is 6.6×10-9 C/cm2K with no modulation frequency dependence. Its figures of merit for the voltage responsivity and specific detectivity are 1.03×10-11 Ccm/J and 1.46×10-9 Ccm/J, respectively. These results indicate that PLT(10) thin film is well applicable to the pyroelectric infrared sensor.
Start & End Page 
343 - 349
Received Date 
Revised Date 
Accepted Date 
Full Text 
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Keyword 
Ferroelectric, PLT Thin Film, Pyroelectric, Voltage Responsivity.
Volume 
Vol.32 No.3 (SEPTEMBER 2005)
DOI 
Citation 
Oon Y.S.Y., Dynamic Pyroelectric Properties of La-Doped PbTiO 3 Thin F ilms with V arious L a Concentrations, Chiang Mai J. Sci., 2005; 32(3): 343-349.
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