Chiang Mai Journal of Science

Print ISSN: 0125-2526 | eISSN : 2465-3845

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Dynamic Pyroelectric Properties of La-Doped PbTiO 3 Thin F ilms with V arious L a Concentrations

Yung Sup Y oon
* Author for corresponding; e-mail address: ysyoon@inha.ac.kr
Volume: Vol.32 No.3 (SEPTEMBER 2005)
Research Article
DOI:
Received: -, Revised: -, Accepted: -, Published: -

Citation: Oon Y.S.Y., Dynamic Pyroelectric Properties of La-Doped PbTiO 3 Thin F ilms with V arious L a Concentrations, Chiang Mai Journal of Science, 2005; 32(3): 343-349.

Abstract

In this study, dynamic pyroelectric properties of  La-doped PbTiO3 (PLT) thin films with dopant  amounts  of  5,  10,  and  15mol%  have  been  investigated.  The  voltage  responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional  to  the  frequency  at high modulation  frequency  for the PLT thin films of  three compositions. The noise voltages for the three compositions decrease with the square root of the modulation frequency due to the predominance of dielectric loss component in Johnson noise. Among the films investigated, the PLT thin film with 10mol% of  La (PLT(10) thin film) shows the best pyroelectric characteristics. The pyroelectric coefficient of  PLT(10) thin film is 6.6×10-9 C/cm2K with no modulation frequency dependence. Its figures of merit for the voltage responsivity and specific detectivity are 1.03×10-11 Ccm/J and 1.46×10-9 Ccm/J, respectively. These results indicate that PLT(10) thin film is well applicable to the pyroelectric infrared sensor.

Keywords: Ferroelectric, PLT Thin Film, Pyroelectric, Voltage Responsivity.

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