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Effects of rf Power on Chemical and Physical Structure of Polytetrafluoroethylene Thin Films


Paper Type 
Contributed Paper
Title 
Effects of rf Power on Chemical and Physical Structure of Polytetrafluoroethylene Thin Films
Author 
Nopporn Rujisamphan* [a], Roy E. Murray [b], S. Ismat Shah [b,c] and Thidarat Supasai [d]
Email 
nopporn.ruj@kmutt.ac.th
Abstract:
Polytetrafluoroethylene (PTFE) thin films were prepared by rf magnetron sputtering in argon plasma. The effects of rf power (10 to 100 W) on the chemical and physical structures of PTFE thin films were studied. X-ray photoelectron spectroscopy (XPS) results showed that small amounts of CF3 (1.75%) were observed at rf power of 10 W. At increased rf power (25-100 W), the intensities of CF2 and C-CF groups dramatically increased accompanied with water contact angle increasing from 78° to 87°. The atomic ratio of fluorine and carbon (F/C) increases from 0.36 to 1.65 with increasing rf power. Fourier transform infrared spectroscopy (FTIR) results showed the overlap of asymmetric and symmetric stretching of CF2 at all rf powers, while the C=C bonding was clearly visible at rf powers from 25 to 100 W. All PTFE thin films showed an amorphous structure and were colorless with almost 93 percent transmittance in visible wavelength.
Start & End Page 
640 - 648
Received Date 
2014-12-04
Revised Date 
Accepted Date 
2015-09-30
Full Text 
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Keyword 
polytetrafluoroethylene thin film, rf sputtering, X-ray photoelectron spectroscopy, contact angle measurement
Volume 
Vol.44 No.2 (April 2017)
DOI 
SDGs
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