Low Threshold Voltage Pentacene OTFTs with O2 Annealed Pr2O3 Gate Insulating Layer
Prasanta Kumar Saikia, Puja Saikia, Ranjit Sarma and Dipok Saikia* Author for corresponding; e-mail address: puja.saik@gmail.com
Volume: Vol.38 No.4 (OCTOBER 2011)
Short Communication
DOI:
Received: -, Revised: -, Accepted: -, Published: -
Citation: Saikia P..K.., Saikia P.., Sarma R.. and Saikia D.., Low Threshold Voltage Pentacene OTFTs with O2 Annealed Pr2O3 Gate Insulating Layer, Chiang Mai Journal of Science, 2011; 38(4): 653-657.
Abstract
Pentacene OTFTs have been successfully reported using Pr2O3 as a gate insulator. The use of high dielectric constant gate dielectric reduces the threshold voltage of the OTFTs bellow-1V. The technique high temperature O2 annealing is success fully used to improve the surface geometry of Pr2O3 films. The fabricated OTFTs gives very low threshold voltage-0.8V and sub-threshold swing 0.9V/decade. The calculated ON-OFF ratio is 1.2x104 and mobility is 0.043cm2/V.s.