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Low Threshold Voltage Pentacene OTFTs with O2 Annealed Pr2O3 Gate Insulating Layer
Paper Type  |
Short Communication |
Title |
Low Threshold Voltage Pentacene OTFTs with O2 Annealed Pr2O3 Gate Insulating Layer |
Author |
Prasanta Kumar Saikia, Puja Saikia, Ranjit Sarma and Dipok Saikia |
Email |
puja.saik@gmail.com |
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Abstract: Pentacene OTFTs have been successfully reported using Pr2O3 as a gate insulator. The use of high dielectric constant gate dielectric reduces the threshold voltage of the OTFTs bellow-1V. The technique high temperature O2 annealing is success fully used to improve the surface geometry of Pr2O3 films. The fabricated OTFTs gives very low threshold voltage-0.8V and sub-threshold swing 0.9V/decade. The calculated ON-OFF ratio is 1.2x104 and mobility is 0.043cm2/V.s. |
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Start & End Page |
653 - 657 |
Received Date |
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Revised Date |
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Accepted Date |
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Full Text |
Download |
Keyword |
pentacene, organic thin film transistors, low threshold voltage |
Volume |
Vol.38 No.4 (OCTOBER 2011) |
DOI |
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Citation |
Saikia P..K.., Saikia P.., Sarma R.. and Saikia D.., Low Threshold Voltage Pentacene OTFTs with O2 Annealed Pr2O3 Gate Insulating Layer, Chiang Mai Journal of Science, 2011; 38(4): 653-657. |
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