Hydrogen Sensing Properties of Pt/MoO333/SiC Based Schottky Diodes
Kandasamy S.*[a], T rinchi A. [a], Wlodarski W . [a], Comini E.[b] and Sber veglieri G.[b]* Author for corresponding; e-mail address: sasikaran@ieee.org
Volume: Vol.32 No.3 (SEPTEMBER 2005)
Research Article
DOI:
Received: -, Revised: -, Accepted: -, Published: -
Citation: S. K., A. T.R.., . W..W., E. C.. and G. S.V.., Hydrogen Sensing Properties of Pt/MoO333/SiC Based Schottky Diodes, Chiang Mai Journal of Science, 2005; 32(3): 361-366.
Abstract
Pt / MoO3 / SiC structures, operated as Schottky diodes have been characterized for their hydrogen sensing performance. The sensor performance was evaluated for different hydrogen gas concentrations, operating temperatures and ambient atmospheres. Their response is measured as the change in voltage when held at a constant biasing current. The properties of hydrogen gas adsorption on barrier height and metal work function has been studied using the steady state I-V characteristics. At an operating temperature of 310°C and constant forward bias current of 0.5 mA, voltage shifts of approximately 300†mV and 2.3 V were observed when hydrogen was introduced into the ambient containing synthetic air and nitrogen.