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JOURNAL DETAIL
Hydrogen Sensing Properties of Pt/MoO333/SiC Based Schottky Diodes
Paper Type  |
Contributed Paper |
Title |
Hydrogen Sensing Properties of Pt/MoO333/SiC Based Schottky Diodes |
Author |
Kandasamy S.*[a], T rinchi A. [a], Wlodarski W . [a], Comini E.[b] and Sber veglieri G.[b] |
Email |
sasikaran@ieee.org |
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Abstract: Pt / MoO3 / SiC structures, operated as Schottky diodes have been characterized for their hydrogen sensing performance. The sensor performance was evaluated for different hydrogen gas concentrations, operating temperatures and ambient atmospheres. Their response is measured as the change in voltage when held at a constant biasing current. The properties of hydrogen gas adsorption on barrier height and metal work function has been studied using the steady state I-V characteristics. At an operating temperature of 310°C and constant forward bias current of 0.5 mA, voltage shifts of approximately 300†mV and 2.3 V were observed when hydrogen was introduced into the ambient containing synthetic air and nitrogen.
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Start & End Page |
361 - 366 |
Received Date |
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Revised Date |
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Accepted Date |
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Full Text |
Download |
Keyword |
Gas, Molybdenum Trioxide, MROSiC, Schottky, Sensor, Hydrogen |
Volume |
Vol.32 No.3 (SEPTEMBER 2005) |
DOI |
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SDGs |
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