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Storage Reliability and Temperature Increment with Tilted Free Layer Magnetization in Nanopillars for Spin Torque Magnetic Memory
Paper Type  |
Contributed Paper |
Title |
Storage Reliability and Temperature Increment with Tilted Free Layer Magnetization in Nanopillars for Spin Torque Magnetic Memory |
Author |
Chayada Surawanitkun, Arkom Kaewrawang, Roong Sivaratana, Anan Kruesubthaworn, Api |
Email |
apirat@kku.ac.th |
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Abstract: Recently, the temperature increment in magnetic tunnel junction (MTJ) nanopillars with relevant current induced magnetization switching for spin transfer torque magnetic random access memory (STT-MRAM) has become interesting because it affects the reliability of devices. In this work, the magnetic stability and the temperature rise in the MTJ nanopillar during the switching process at pulse durations of less than 1 ns were explored with tilted magnetization in the free layer (FL). The thermal simulation was performed by the 3D finite element method. The results indicate that the increase of the initial angle between the magnetization vector and the major axis in the FL, |
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Start & End Page |
490 - 500 |
Received Date |
2012-12-12 |
Revised Date |
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Accepted Date |
2014-09-22 |
Full Text |
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Keyword |
Current induced magnetization switching, STT magnetic random access memory, Joule heating, Magnetic tunnel junction |
Volume |
Vol.42 No.2 (APRIL 2015) |
DOI |
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Citation |
Surawanitkun C., Kaewrawang A., Sivaratana R., Kruesubthaworn A. and Api , Storage Reliability and Temperature Increment with Tilted Free Layer Magnetization in Nanopillars for Spin Torque Magnetic Memory , Chiang Mai Journal of Science, 2015; 42(2): 490-500. |
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