Paper Type |
Contributed Paper |
Title |
Effect of AlGaAs buffer layer on defect distribution in cubic GaN grown on GaAs (001) by MOVPE |
Author |
Jamreonta Parinyataramas [a], Sakuntam Sanorpim *[a, b], Chanchana Thanachayanont [c] and Kentaro O |
Email |
sakuntam.s@chula.ac.th |
Abstract: Transmission electron microscopy (TEM) was applied to verify defect-structures in cubic GaN layer on GaAs (001) substrate grown by metalorganic vapor phase epitaxy. As an expectation, with the use of AlGaAs as a buffer layer, the GaN/AlGaAs/GaAs interfaces were successfully protected from thermal decomposition at a relatively high growth temperature (960°C). The best quality of cubic GaN layer with a certain amount of the hexagonal phase inclusion was confirmed using electron diffraction patterns. Two different types of structural defects, which are stacking faults and threading dislocations, were clearly observed. Cross-sectional TEM image taken along the [110] zone-axis showed a high-density of planar defects generated from the interface of GaN/AlGaAs. On the other hand, plan-view TEM image showed an anisotropic distribution of the planar defects, which is elongated along the [110] direction. The cross-sectional TEM image taken along the [1-10] zone-axis confirmed a nearly planar-defects free layer. |
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Start & End Page |
971 - 977 |
Received Date |
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Revised Date |
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Accepted Date |
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Full Text |
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Keyword |
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Volume |
Vol.40 No.6 SPECIAL ISSUE 2 |
DOI |
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Citation |
Parinyataramas J., [a S.S., B] , Thanachayanont C. and O K., Effect of AlGaAs buffer layer on defect distribution in cubic GaN grown on GaAs (001) by MOVPE, Chiang Mai J. Sci., 2013; 40(6): 971-977. |
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